| Manufacturer: | SAMSUNG |
| Manufacturer Part No: | MZ-V9S1T0BW |
| General |
| Device Type: | Solid state drive - internal |
| Capacity: | 1 TB |
| Hardware Encryption: | Yes |
| Encryption Algorithm: | 256-bit AES |
| NAND Flash Memory Type: | Triple-level cell (TLC) |
| Form Factor: | M.2 2280 |
| Interface: | PCIe 5.0 x2 (NVMe) |
| Features: | Intelligent TurboWrite Technology, Samsung V-NAND TLC Technology, Device Sleep support, Host Memory Buffer (HMB), TRIM support, Auto Garbage Collection Algorithm, S.M.A.R.T., IEEE 1667 |
| Width: | 22.15 mm |
| Depth: | 80.15 mm |
| Height: | 2.38 mm |
| Weight: | 9 g |
| Performance |
| Internal Data Rate: | 7150 MBps (read) / 6300 MBps (write) |
| Maximum 4KB Random Write: | 1350000 IOPS |
| Maximum 4KB Random Read: | 850000 IOPS |
| Reliability |
| MTBF: | 1.500.000 hours |
| Expansion & Connectivity |
| Compatible Bay: | M.2 2280 |
| Power |
| Power Consumption: | 4.3 Watt (read)
4.2 Watt (write)
60 mW (standby)
5 mW (sleep) |
| Software & System Requirements |
| Software Included: | Samsung Magician Software |
| Miscellaneous |
| Enclosure Material: | Nickel coating |
| Manufacturer Warranty |
| Service & Support: | Limited warranty - 5 years / 600 TBW |
| Environmental Parameters |
| Min Operating Temperature: | 0 °C |
| Max Operating Temperature: | 70 °C |
| Shock Tolerance (non-operating): | 1500 g @ 0.5 ms |
| Vibration Tolerance (non-operating): | 20 g @ 20-2000 Hz |
